By Paul M. Brown Jr.
Program particular built-in circuits (ASICs), either analog and electronic, became regular method point bulding blocks. ASIC owners have tried to supply instruments that they desire will let rather green IC designers (i.e. structures engineers) to layout subtle customized built-in circuits. This philosophy has been extra winning in electronic know-how than in analog. considerably extra paintings is concerned with analog layout and much fewer automatic instruments can be found. nearly each analog ASIC seller bargains assorted semiconductor applied sciences, device units, documentation (usually missing intimately and never offering the correct historical past and guidelines), and ranging degrees of engineering help. the result's that many engineers who may well use analog ASICs lack the technical details to take action. they aren't certain whilst customized analog ICs are good value or which seller will top serve their wishes. moreover, many engineers would not have sufficient analog layout adventure, in particular with built-in circuits. Consqeuently, many that may gain advantage from analog ASIC know-how don't use it whereas others have undesirable stories which could have simply been refrained from.
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Current vendor data should be consulted before any detailed design work is started. IC manu facturers change their processes from time to time to improve perfor mance and production yields. If you are considering multiple sources for a custom IC, it is wise to review the design data from the alternate manufacturer(s) prior to beginning detailed design work. A little re search up front will help you identify and avoid vendor dependencies. This forethought will guarantee you a design that is sourceable with high production yields from multiple vendors.
The low value of base resistance reduces the input noise of the device. Table 3-5 lists some typical large signal transistor characteristics. Lateral pnp Lateral pnp transistors typically found on semicustom arrays include single-, dual-, and quad-collector configurations. These geometries and their transistor equivalents are illustrated in Figure 3-17. The collectors Figure 3-15 Typical large-signal npn geometry. 56 3. 5 V eb0 can be combined or separated to create convenient ratios of currents for current source and amplifier applications.
The emitter and collector of the lateral pnp are formed from the npn base, which is not a very rich diffusion. This limits the pnp emitter efficiency. 6 mils), which makes the effective base width very wide, increasing the chance of carrier recombination in the base region. This increases the base cur rent for a given collector current, resulting in a relatively low beta. The emitter-to-collector current flow is lateral, as the name im plies. The purpose of the buried layer in a lateral pnp is to keep carriers from being collected by the reverse-biased, epi-substrate junction.
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